參數(shù)資料
型號(hào): BTB04D
廠商: 意法半導(dǎo)體
英文描述: SENSITIVE GATE TRIACS
中文描述: 靈敏柵極雙向可控硅
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 438K
代理商: BTB04D
BTA04 T/D/S/A BTB04 T/D/S/A
2/6
Symbol
Rth (j-a)
Rth (j-c) DC
Parameter
Value
60
4.4
3.2
3.3
2.4
Unit
°
C/W
°C/W
Junction to ambient
Junction to case for DC
BTA
BTB
BTA
BTB
Rth (j-c) AC
Junction to case for 360° conduction angle (F = 50Hz)
°C/W
GATE CHARACTERISTICS
(maximum values)
P
G(AV)
= 1W
P
GM
= 40W (tp = 20μs)
I
GM
= 4A (tp = 20μs)
V
GM
= 16V (tp = 20μs)
THERMAL RESISTANCE
Symbol
Test conditions
Quadrant
BTA / BTB04
Unit
T
D
S
A
I
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25°C
I - II - III
MAX.
5
5
10
10
mA
IV
MAX.
5
10
10
25
V
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25°C
I - II - III - IV
MAX.
1.5
V
V
GD
V
D
= V
DRM
R
L
= 3.3k
Tj =110°C
I - II - III - IV
MIN.
0.2
V
tgt
V
D
= V
DRM
dI
G
/dt = 0.5A/μs
I
G
= 40mA
Tj = 25°C
I - II - III - IV
TYP.
2
μs
I
L
I
G
= 1.2I
GT
Tj = 25°C
I - III - IV
TYP.
10
10
20
20
mA
II
20
20
40
40
I
H
*
I
T
= 100mA Gate open
Tj = 25°C
MAX.
15
15
25
25
mA
V
TM
*
I
TM
= 5.5A
tp = 380μs
Tj = 25°C
MAX.
1.65
V
I
DRM
I
RRM
V
DRM
rated
V
RRM
rated
Tj = 25°C
MAX.
0.01
mA
Tj = 110°C
MAX.
0.75
dV/dt *
Linear slope up to
V
D
= 67% V
DRM
gate open
Tj = 110°C
TYP.
10
10
-
-
V/
μ
s
MIN.
-
-
10
10
(dI/dt)c*
(dI/dt)c = 1.8A/ms
Tj = 110°C
TYP.
1
1
5
5
V/μs
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ELECTRICAL CHARACTERISTICS
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