參數(shù)資料
型號: BTB08TW
廠商: 意法半導(dǎo)體
英文描述: Logic Level Triacs(邏輯電平雙向可控硅)
中文描述: 雙向邏輯電平(邏輯電平雙向可控硅)
文件頁數(shù): 2/5頁
文件大?。?/td> 69K
代理商: BTB08TW
GATECHARACTERISTICS
(maximum values)
PG (AV)= 1W
PGM= 10W (tp = 20
μ
s)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°
C/W
Rth (j-c) DC Junction to case for DC
BTA
4.0
°
C/W
BTB
3.3
Rth (j-c) AC
Junction to case for 360
°
conduction angle
( F= 50 Hz)
BTA
3.0
°
C/W
BTB
2.5
Symbol
Test Conditions
Quadrant
Suffix
Unit
TW
SW
IGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MAX
5
10
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MAX
1.5
V
VGD
VD=VDRMRL=3.3k
Tj=110
°
C
I-II-III
MIN
0.2
V
tgt
VD=VDRM
dIG/dt = 0.5A/
μ
s
IG= 40mA
Tj=25
°
C
I-II-III
TYP
2
μ
s
IL
IG=1.2 IGT
Tj=25
°
C
I-III
TYP
8
15
mA
II
15
25
IH *
IT= 100mA gate open
Tj=25
°
C
MAX
15
25
mA
VTM *
ITM= 11A
tp= 380
μ
s
Tj=25
°
C
MAX
1.75
V
IDRM
IRRM
VDRM
VRRM
Rated
Rated
Tj=25
°
C
MAX
0.01
mA
Tj=110
°
C
MAX
1
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110
°
C
MIN
20
50
V/
μ
s
(dI/dt)c *
dV/dt= 0.1V/
μ
s
Tj=110
°
C
MIN
3.5
4.5
A/ms
dV/dt= 20V/
μ
s
MIN
1.8
3.5
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
IGM= 4A (tp = 20
μ
s)
VGM= 16V (tp = 20
μ
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA08 TW/SW / BTB08 TW/SW
2/5
相關(guān)PDF資料
PDF描述
BTB10-600BRG 10A TRIACS
BTB10-600CRG 10A TRIACS
BTB10-600CWRG 10A TRIACS
BTB10-800BRG 10A TRIACS
BTB10-800BWRG 10A TRIACS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BTB08-XXXB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS
BTB08-XXXBW 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS
BTB08-XXXC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS
BTB08-XXXCW 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS
BTB08-XXXSW 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8A TRIACS