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參數(shù)資料
| 型號(hào)： | BTB10-600CRG |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 10A TRIACS |
| 中文描述： | 10A條雙向可控硅 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | BTB10-600CRG |
BTA10 and BTB10 Series
4/7
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
Figure 7: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus junction
temperature
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
100
110
I
(A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =95°C
0.01
0.10
1.00
10.00
10
100
1000
I
(A), I t (A s)
TSM
2
2
t (ms)
T initial=25°C
j
I
TSM
I t
2
dI/dt limitation:
50A/μs
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
I
GT H L
j
I
GT H L
j
I
GT
I
H
& I
L
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dV/dt)c (V/μs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW
C
B
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
(dI/dt)c [T s
T (°C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTB10-600CWRG | 10A TRIACS |
| BTB10-800BRG | 10A TRIACS |
| BTB10-800BWRG | 10A TRIACS |
| BTB10-800CRG | 10A TRIACS |
| BTB10-800CWRG | 10A TRIACS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTB10-600CW | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:10A TRIACS |
| BTB10-600CWRG | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:10A TRIACS |
| BTB10-700AW | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|700V V(DRM)|10A I(T)RMS|TO-220 |
| BTB10-700B | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:STANDARD TRIACS |
| BTB10-700BW | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRIAC|700V V(DRM)|10A I(T)RMS|TO-220 |
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