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參數(shù)資料
| 型號(hào)： | BTB10C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Standard Triacs(標(biāo)準(zhǔn)雙向可控硅) |
| 中文描述： | 標(biāo)準(zhǔn)雙向（標(biāo)準(zhǔn)雙向可控硅） |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | BTB10C |
ORDERING INFORMATION
Package
IT(RMS)
A
VDRM/ VRRM
V
Sensitivity Specification
B
C
BTA
(Insulated)
10
400
X
X
600
X
X
700
X
X
800
X
X
BTB
(Uninsulated)
400
X
X
600
X
X
700
X
X
800
X
X
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
180
O
= 180
o
= 120
o
= 90
o
o
= 60
= 30
o
T(RMS)
I
(A)
P(W)
Fig.1 :
Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
-90
-85
-95
-100
-105
-110
-115
-120
-125
P (W)
Tamb ( C)
Tcase ( C)
o
Rth = 0 C/W
2.5 C/W
5 C/W
7.5 C/W
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
0
10 20 30 40 50 60 70 80 90 100110120130
0
2
4
6
8
10
12
= 180
o
Tcase( C)
BTA
BTB
I
(A)
T(RMS)
Fig.4 :
RMS on-state current versus case temperature.
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
14
-90
-95
-100
-105
-110
-115
-120
-125
P (W)
Tamb ( C)
Tcase ( C)
o
Rth = 0 C/W
2.5 C/W
5 C/W
7.5 C/W
Fig.2 :
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
BTA10 B/C / BTB10 B/C
3/5
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