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參數(shù)資料
| 型號： | BTS410-D2 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側(cè)電源開關(guān) |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 182K |
| 代理商： | BTS410-D2 |
BTS 410 D2
Semiconductor Group
8
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
V
bb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E AS
bb
L
R
ELoad
L
RL
{
Z
L
Energy stored in load inductance:
EL = 1/2LI
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER=
∫ VON(CL)iL(t) dt,
with an approximate solution for RL > 0 :
EAS=
IL L
2RL
(Vbb + |VOUT(CL)|) ln (1+
ILRL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0
L [mH]
1
10
100
1000
10000
12
3
4
5
6
IL [A]
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ZthJC [K/W]
0.01
0.1
1
10
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
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