參數(shù)資料
型號: BTS728L2
廠商: SIEMENS A G
元件分類: 外設(shè)及接口
英文描述: Smart High-Side Power Switch Two Channels: 2 x 60mW Status Feedback
中文描述: 4 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20
封裝: PLASTIC, SO-20
文件頁數(shù): 14/14頁
文件大小: 241K
代理商: BTS728L2
BTS 728 L2
Semiconductor Group
Page 9
1999-Mar-23
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
V
GND
V
IN
V
ST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
high
For inductive load currents up to the limits defined by Z
L
(max. ratings and diagram on page 9) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E AS
bb
L
R
ELoad
R
L
{L
Z
Energy stored in load inductance:
EL = 1/2LI
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER=
VON(CL)iL(t) dt,
with an approximate solution for RL > 0 :
EAS=
IL L
2RL
(Vbb + |VOUT(CL)|) ln (1+
ILRL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off (one channel)4)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0
ZL [mH]
1
10
100
1000
23456
789
10
11
12
IL [A]
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