參數(shù)資料
型號: BTW69N1200
廠商: 意法半導(dǎo)體
英文描述: SCR
中文描述: 可控硅
文件頁數(shù): 2/5頁
文件大?。?/td> 234K
代理商: BTW69N1200
BTW67 and BTW69 Series
2/5
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note
: xxx = voltage
Symbol
Test Conditions
Value
Unit
I
GT
V
D
= 12 V
R
L
= 33
MIN.
MAX.
8
mA
80
V
GT
V
GD
I
H
I
L
dV/dt
MAX.
1.3
V
V
D
= V
DRM
R
L
= 3.3 k
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
Gate open
I
TM
= 100 A
tp = 380 μs
Tj = 125°C
MIN.
0.2
V
Gate open
MAX.
150
mA
MAX.
200
mA
Tj = 125°C
MIN.
1000
V/μs
V
TM
V
t0
R
d
I
DRM
I
RRM
Tj = 25°C
MAX.
1.9
V
Threshold voltage
Tj = 125°C
MAX.
1.0
V
Dynamic resistance
Tj = 125°C
MAX.
8.5
m
μA
V
DRM
= V
RRM
Tj = 25°C
MAX.
10
Tj = 125°C
5
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
RD91 (Insulated)
TOP3 Insulated
1.0
0.9
°C/W
R
th(j-a)
Junction to ambient
TOP3 Insulated
50
°C/W
Part Number
Voltage (xxx)
Sensitivity
Package
600 V
800 V
1200 V
BTW67-xxx
X
X
X
80 mA
RD91
BTW69-xxx
X
X
X
80 mA
TOP3 Ins.
Part Number
Marking
Weight
Base Quantity
Packing mode
BTW67-xxx
BTW67xxx
20.0 g
25
Bulk
BTW69-xxx
BTW69xxx
4.5 g
120
Bulk
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