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參數資料
| 型號： | BU208D |
| 廠商： | 意法半導體 |
| 英文描述： | Strain Relief RoHS Compliant: Yes |
| 中文描述： | 高壓快速開關NPN電源晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BU208D |
BU208D
BU508D/BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
I
BU208D AND BU508DFI ARE STM
PREFERRED SALESTYPES
I
HIGH VOLTAGECAPABILITY
I
U.L.RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N)
I
JEDEC TO-3METAL CASE
I
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
I
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The
BU208D, BU508D and BU508DFI are
manufactured
using
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
Multiepitaxial
Mesa
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
Parameter
Value
1500
700
10
8
15
Unit
V
V
V
A
A
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
TO - 3
150
-65 to 175 -65 to 150
175
TO - 218
125
ISOWATT218
50
-65 to 150
150
P
tot
T
stg
T
j
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
W
o
C
o
C
150
1
2
3
TO-218
ISOWATT218
1
2
3
1
2
TO-3
For TO-3 :
C =Tab
E = Pin2.
1/8
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