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參數(shù)資料
| 型號： | BU2520A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88% |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 60K |
| 代理商： | BU2520A |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
= 1.2 A
I
C
= 100 mA; V
= 5 V
I
C
= 6 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
1.0
-
-
mA
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
6
5
-
-
5.0
1.3
26
10
V
V
13
7
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (32 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
CM
= 6.0 A; L
= 330
μ
H; C
fb
= 9 nF;
I
= 0.85 A; L
= 3.45
μ
H;
-V
BB
= 4 V; (-dI
B
/dt = 1.2 A/
μ
s)
TYP.
115
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (16 kHz line
deflection circuit)
3.0
0.2
4.0
0.35
μ
s
μ
s
I
CM
= 6.0 A; L
= 650
μ
H; C
= 19 nF;
I
= 1.0 A; L
B
= 5.3
μ
H; -V
BB
= 4 V;
(-dI
B
/dt = 0.8 A /
μ
s)
t
s
t
f
Turn-off storage time
Turn-off fall time
4.5
0.35
5.5
0.5
μ
s
μ
s
Fig.1. Test circuit for V
CEO
sust.
Fig.2. Oscilloscope display for V
CEO
sust.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2
Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2520A/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU2520AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU2520AF/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU2520AW | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2520AW/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
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