參數(shù)資料
型號: BU2522AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 71K
代理商: BU2522AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522AF
Fig.13. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
Fig.14. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.15. Reverse bias safe operating area. T
j
T
jmax
Fig.16. Forward bias safe operating area.T
= 25 C
I
& I
= f(V
); I
single pulse; parameter t
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2520AF
IC / A
100
10
1
0.1
0.01
1
10
100
1000
VCE / V
100 us
1 ms
10 ms
DC
30 us
tp =
Ptot
ICM
ICDC
= 0.01
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
D
t
10
1
0.1
0.01
0.001
BU2522AF
0
30
20
10
0
500
1000
1500
VCE / V
IC / A
September 1997
5
Rev 1.400
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