參數(shù)資料
型號: BU52040HFV-TR
廠商: Rohm Semiconductor
文件頁數(shù): 9/15頁
文件大小: 465K
描述: IC HALL EFFECT BIPO LATCH HVSOF5
特色產(chǎn)品: ROHM Hall Effect Sensor ICs
標(biāo)準(zhǔn)包裝: 1
傳感范圍: 5mT 跳閘,-5mT 釋放
類型: 雙極卡鎖
電源電壓: 1.65 V ~ 3.3 V
電流 - 電源: 300µA
電流 - 輸出(最大): ±0.5mA
輸出類型: 數(shù)字,開路集電極
工作溫度: -40°C ~ 85°C
封裝/外殼: SOT-665
供應(yīng)商設(shè)備封裝: 5-HVSOF
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: BU52040HFV-DKR
BU52040HFV-DKR-ND
BU52040HFVDKR
BU52040HFV 
Technical Note
 
9/12
www.rohm.com
2010.01 - Rev.B
?2010 ROHM Co., Ltd. All rights reserved.
?SPAN class="pst BU52040HFV-TR_2601631_6">Magnet Selection 
 
 
Horizontally Stacked Magnet
 
Vertically Stacked Magnet
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Because the field loop in horizontally stacked magnets extends for a shorter distance than that of vertically stacked magnets,
the gap between the magnet and the hall IC must be decreased. Therefore, if horizontally-stacked magnets are used in the
application, the thickness of the magnet or the area of each section should be increased to allow for a larger gap between
the magnet and IC.
 
Because the IC is unable to detect rotation direction if using magnets that are smaller than the ICs package size, ensure that
the physical size of each N/S division is larger than the ICs package, and that the ICs are properly mounted with an angular
distance of either ?4 or 睛 from one another (where ?= N/S division angle of circular magnet).
 
?SPAN class="pst BU52040HFV-TR_2601631_6">IC Reference Position 
 
 
 
 
 
 
 
 
 
 
 
 
S
 
 
 
 
?SPAN class="pst BU52040HFV-TR_2601631_6">Position of the Hall Effect IC(Reference) 
 
 
 
 
 
 
 
 
 
 
 
UNITmm
S
S
N
Flux
Flux
S
S
N
N
S
N
N
S
Magnet N/S division angle = ?
Circular Magnet
S
N
N
S
N
S
N
S
S
S
S
N
N
N
N
Hall IC (x2)
Mounting angle of Hall IC
Clockwise
rotation
Counterclockwise
rotation
HVSOF5
0.6
0.8
0.2
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