參數(shù)資料
型號: BU806AU
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 8 A, 200 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 1/59頁
文件大?。?/td> 342K
代理商: BU806AU
3–249
Motorola Bipolar Power Transistor Device Data
NPN Darlington Power
Transistor
This Darlington transistor is a high voltage, high speed device for use in horizontal
deflection circuits in TV’s and CRT’s.
High Voltage: VCEV = 330 or 400 V
Fast Switching Speed:
tc = 1.0 s (max)
Low Saturation Voltage:
VCE(sat) = 1.5 V (max)
Packaged in JEDEC TO–220AB
Damper Diode VF is specified.
VF = 2.0 V (max)
MAXIMUM RATINGS
Rating
Symbol
BU806
Unit
Collector–Emitter Voltage
VCEO
200
Vdc
Collector–Emitter Voltage
VCEV
400
Vdc
Collector–Base Voltage
VCBO
400
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
— Peak
IC
8.0
15
Adc
Emitter–Collector Diode Current
IF
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation, TC = 25°C
Derate above TC = 25_C
PD
60
0.48
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
2.08
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
70
_C/W
Lead Temperature for Soldering Purposes,
1/8
″ from Case for 5.0 Seconds
TL
275
_C
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BU806
8.0 AMPERE
DARLINGTON
NPN POWER
TRANSISTORS
60 WATTS
200 VOLTS
CASE 221A–06
TO–220AB
REV 1
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