參數(shù)資料
型號： BUK110-50GL
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET
中文描述： BUF OR INV BASED PRPHL DRVR, PSSO3
封裝： SOT404, 3 PIN
文件頁數(shù)： 9/11頁
文件大?。?/td> 109K
代理商： BUK110-50GL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK110-50GL
Fig.26. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 25 A; V
IS
= 10 V
Fig.27. Clamping energy test circuit, R
IS
= 50
.
E
DSM
=
0.5
LI
D
Fig.28. Typical off-state leakage current.
I
DSS
= f(T
j
); Conditions: V
DS
= 40 V; I
IS
= 0 V.
Fig.29. Normalised input current (normal operation).
I
IS
/I
IS
25 C = f(T
j
); V
IS
= 5 V
Fig.30. Normalised input current (protection latched).
I
ISL
/I
ISL
25 C = f(T
j
); V
IS
= 5 V
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
-60
-20
20
60
Tj / C
100
140
180
Iiso normalised to 25 C
1.5
1
0.5
L
D.U.T.
VDD
RIS
R 01
shunt
VDS
-ID/100
+
-
VIS
0
P
D
S
I
TOPFET
ID
0
VDS
0
VDD
V(CL)DSS
Schottky
-60
-20
20
60
Tj / C
100
140
180
Iisl normalised to 25 C
1.5
1
0.5
2
V
(
CL
)
DSS
/(
V
(
CL
)
DSS
V
DD
)
0
20
40
60
80
100
120
140
Tj / C
Idss
1 mA
100 uA
10 uA
1 uA
100 nA
typ.
June 1996
9
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK110-50GS PowerMOS transistor TOPFET
BUK214-50Y POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
BUK224-50Y TOPFET high side switch
BUK436-200A POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
BUK436-200B POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK110-50GL /T3 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK110-50GL,118 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK110-50GS 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET
BUK111-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level TOPFET SMD version of BUK112-50GL
BUK112-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
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