參數(shù)資料
型號(hào): BUK110-50GS
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor TOPFET
中文描述: 50 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 8/11頁(yè)
文件大?。?/td> 113K
代理商: BUK110-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK110-50GS
Fig.20. Test circuit for resistive load switching times.
Fig.21. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 1.1
; R
I
= 50
, T
j
= 25 C.
Fig.22. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 1.1
; R
I
= 50
, T
j
= 25 C.
Fig.23. Test circuit for inductive load switching times.
Fig.24. Typical switching waveforms, inductive load.
V
DD
= 13 V; I
D
= 11 A; R
I
= 50
, T
j
= 25 C.
Fig.25. Typical switching waveforms, inductive load.
V
DD
= 13 V; I
D
= 11 A; R
I
= 50
, T
j
= 25 C.
VDD
D.U.T.
R
0V
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
RL
: adjust for correct ID
VDD = VCL
LD
D.U.T.
R
0V
tp
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
0
10
20
RESISTIVE TURN-ON
time / us
BUK110-50GS
15
10
5
0
VDS / V
VIS / V
ID / A
10%
10%
90%
td on
tr
0
10
20
INDUCTIVE TURN-ON
VDS / V
time / us
BUK110-50GS
10
5
0
VIS / V
ID / A
90%
10%
10%
tr
td on
0
20
40
RESISTIVE TURN-OFF
time / us
BUK110-50GS
15
10
5
0
10
30
50
VDS / V
ID / A
VIS / V
90%
90%
10%
td off
tf
0
20
40
INDUCTIVE TURN-OFF
time / us
BUK110-50GS
10
5
0
10
30
50
VIS / V
ID / A
VDS / V
90%
90%
10%
tf
td off
June 1996
8
Rev 1.000
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