參數(shù)資料
型號(hào): BUK451-100B
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: PowerMOS transistor
中文描述: 3 A, 100 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 48K
代理商: BUK451-100B
Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 2.5 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
12
14
VGS / V
ID / A
BUK4y1-100
10
8
6
4
2
0
Tj / C = 25
150
-60
-20
20
60
Tj / C
100
140
180
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
2
4
6
8
ID / A
gfs / S
BUK4y1-100A
2
1.5
1
0.5
0
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
BUK4y1-100A
1000
January 1980
相關(guān)PDF資料
PDF描述
BUK452-100A PowerMOS transistor
BUK452-100B PowerMOS transistor
BUK453-60A PowerMOS transistor
BUK453-60 PowerMOS transistor
BUK453-60B PowerMOS transistor
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