- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373032 > BUK455-200B (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BUK455-200B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 13 A, 200 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | BUK455-200B |
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK455
-200A
200
14
125
175
0.23
-200B
200
13
125
175
0.28
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
A
W
C
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
MAX.
200
200
30
UNIT
V
V
V
-200A
14
10
56
-200B
13
9
52
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
125
175
175
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.2
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
August 1996
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK455-60A | PowerMOS transistor |
| BUK455-60B | PowerMOS transistor |
| BUK455-60H | PowerMOS transistor |
| BUK455 | PowerMOS transistor |
| BUK456-100A | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK455-200B/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 MOSFET N KANAL |
| BUK455-400A | 制造商:NXP Semiconductors 功能描述:6.5 A, 400 V, 1 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB |
| BUK455-400B | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-220AB |
| BUK455-450B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK455-500A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。