參數(shù)資料
型號(hào): BUK456-1000
廠商: NXP Semiconductors N.V.
英文描述: PowerMOS transistor
中文描述: 功率金屬氧化物半導(dǎo)體晶體管
文件頁數(shù): 1/7頁
文件大?。?/td> 61K
代理商: BUK456-1000
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-1000B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
1000
3.1
125
5
V
A
W
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
1000
1000
30
3.1
2.0
12
125
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.0
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
May 1995
1
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK456-1000A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK456-1000B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-100A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-100B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-100B/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT