參數(shù)資料
型號(hào): BUK466-100A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 34 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 70K
代理商: BUK466-100A
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx56-lv
D =
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
BUK456-100A
8
VDS / V
70
60
50
40
30
20
10
0
4
5
6
7
10
15
20
ID / A
VGS / V =
1
10
100
1000
VDS / V
ID / A
1000
100
10
1
BUK456-100A,B
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
A
RDS(ON) = VDS/ID
0
20
40
60
80
BUK456-100A
ID / A
0.2
0.1
0
4.5
5
5.5
6
6.5
7
7.5
8
10
20
RDS(ON) / Ohm
VGS / V =
February 1996
3
Rev 1.000
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