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參數(shù)資料
| 型號： | BUK542-60B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 8.4 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | BUK542-60B |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK542-60A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic full-pack
envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK542
-60A
60
9.2
22
0.15
-60B
60
8.4
22
0.18
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance;
V
A
W
V
GS
= 5 V
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
±
V
GSM
Non-repetitive gate-source voltage t
p
≤
50
μ
s
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
-
MAX.
60
60
15
20
UNIT
V
V
V
V
-60A
9.2
5.8
37
-60B
8.4
5.3
33
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
22
150
150
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
5.68
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
August 1994
1
Rev 1.100
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| BUK543-100A | PowerMOS transistor Logic level FET |
| BUK543-100B | PowerMOS transistor Logic level FET |
| BUK545-200A | PowerMOS transistor Logic level FET |
| BUK545-200B | RP20 (FW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 4:1 Wide Input Voltage Range; 20 Watts Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63??C; Standard 2? x 1? Package and Pinning; Efficiency to 86% |
| BUK545-60A | PowerMOS transistor Logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK543-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK543-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK543-50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK543-50B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK543-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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