參數(shù)資料
型號(hào): BUK7105-40ATE
英文描述: TrenchPLUS standard level FET
中文描述: TrenchPLUS標(biāo)準(zhǔn)電平場效應(yīng)管
文件頁數(shù): 14/16頁
文件大?。?/td> 341K
代理商: BUK7105-40ATE
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
7 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Tj =25 °C; tp = 300 sTj =25 °C; ID =50A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C; tp = 300s
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ni86
0
100
200
300
400
024
68
10
VDS (V)
ID
(A)
4
4.5
5
5.5
6
6.5
7
7.5
8
10
20
Label is VGS (V)
03ni88
0
4
8
12
4
8
12
16
20
VGS (V)
RDSon
(m
)
03ni87
0
5
10
15
20
0
100
200
300
400
ID (A)
RDSon
(m
)
VGS = 5.5 V 6 V
6.5 V
7 V
8 V
10 V
20 V
03ni30
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
a
Tj (°C)
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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