參數(shù)資料
型號(hào): BUK7107-55ATE
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 75A I(D) | SOT-426
中文描述: 晶體管| MOSFET | N-CHANNEL | 50V V(BR)DSS | 75A I(D) | SOT-426封裝
文件頁數(shù): 11/16頁
文件大?。?/td> 341K
代理商: BUK7107-55ATE
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
4 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Thermal characteristics
4.1 Transient thermal impedance
Table 3:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction to ambient
SOT263B
vertical in still air
-
60
-
K/W
SOT426
mounted on printed circuit
board; minimum footprint
-
50
-
K/W
Rth(j-mb)
thermal resistance from junction to mounting
base
-
0.55
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ni64
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
10
tp(s)
Z th(j-mb)
(K/W)
tp
T
P
t
T
δ =
δ = 0.5
0.1
0.05
0.02
single shot
0.2
相關(guān)PDF資料
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BUK7109-75AIE TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | TO-263VAR
BUK7109-75ATE TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426
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BUK7107-55ATE /T3 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7107-55ATE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7108-40AIE 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchPLUS standard level FET
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BUK7108-40AIE,118 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube