參數(shù)資料
型號(hào)： BUK7560-100A
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： TrenchMOS standard level FET
中文描述： 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 5/15頁(yè)
文件大?。?/td> 318K
代理商： BUK7560-100A
Philips Semiconductors
BUK7560-100A; BUK7660-100A
TrenchMOS standard level FET
Product specification
Rev. 01 — 22 February 2001
5 of 15
9397 750 07807
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
100
89
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 100 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 15 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
3
4
4.4
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
51
60
150
m
m
Dynamic characteristics
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
1030
143
90
10
45
31
20
4.5
1377
171
120
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 10 V; R
G
= 10
;
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
3.5
nH
2.5
nH
L
s
internal source inductance
7.5
nH
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK7575-100A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7575-100A,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7575-100A127 制造商:NXP Semiconductors 功能描述:N CH MOSFET TRENCH AUTOMOTIVE 100V 75
BUK7575-55 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK7575-55,127 功能描述:MOSFET BUK7575-55/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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