- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373033 > BUK7606-30 (NXP SEMICONDUCTORS) Aluminum Snap-In Capacitor; Capacitance: 18000uF; Voltage: 50V; Case Size: 35x50 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | BUK7606-30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 18000uF; Voltage: 50V; Case Size: 35x50 mm; Packaging: Bulk |
| 中文描述： | 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BUK7606-30 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
BUK7606-30
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
0
20
40
60
80
100
BUK7506-30
VDS / V
ID / A
VGS / V =
4
4.5
5
5.5
6
6.5
10
8
7
1
10
100
1
10
100
1000
7506-30
VDS / V
ID / A
RDS(ON) = VDS / ID
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
0
20
40
60
80
100
0
PHP18N20E
ID / A
RDS(ON) / mOhm
20
15
10
5
VGS / V =
10
8
7
6.5
6
5.5
5
December 1997
4
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK7624-55 | TrenchMOS transistor Standard level FET |
| BUK7628-55 | TrenchMOS transistor Standard level FET |
| BUK7675-55 | TrenchMOS transistor Standard level FET |
| BUK7720-55A | CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes |
| BUK78150-55 | CAP,2.2uF,50VDC,10-% Tol,10+% Tol |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK7606-55A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK7606-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7606-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7606-55B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7606-55B,118 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。