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參數(shù)資料
| 型號(hào)： | BUK7909-75ATE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-263B |
| 中文描述： | 晶體管| MOSFET的| N溝道| 70V的五（巴西）直| 75A條（?。﹟的SOT - 263B |
| 文件頁數(shù)： | 14/16頁 |
| 文件大?。?/td> | 341K |
| 代理商： | BUK7909-75ATE |
Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
Product data
Rev. 01 — 20 August 2003
7 of 16
9397 750 11694
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Tj =25 °C; tp = 300 sTj =25 °C; ID =50A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C; tp = 300s
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ni86
0
100
200
300
400
024
68
10
VDS (V)
ID
(A)
4
4.5
5
5.5
6
6.5
7
7.5
8
10
20
Label is VGS (V)
03ni88
0
4
8
12
4
8
12
16
20
VGS (V)
RDSon
(m
)
03ni87
0
5
10
15
20
0
100
200
300
400
ID (A)
RDSon
(m
)
VGS = 5.5 V 6 V
6.5 V
7 V
8 V
10 V
20 V
03ni30
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
a
Tj (°C)
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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| BUK7909-75ATE,127 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK793-60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-263 |
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| BUK794R1-40BT,127 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK795-60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 38A I(D) | SOT-263 |
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