參數(shù)資料
型號: BUK9518-30
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 55 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/8頁
文件大?。?/td> 47K
代理商: BUK9518-30
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK9518-30
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
55
UNIT
A
-
-
-
-
-
-
220
1.2
-
-
-
A
V
I
F
= 25 A; V
GS
= 0 V
I
F
= 55 A; V
GS
= 0 V
I
F
= 55 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 25 V
0.95
1.0
70
0.1
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
ns
μ
C
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 28 A; V
25 V;
V
GS
= 10 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
TYP.
-
MAX.
80
UNIT
mJ
December 1997
3
Rev 1.100
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