參數(shù)資料
型號： BUL43BBS
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 2 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 51/59頁
文件大?。?/td> 364K
代理商： BUL43BBS
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–27
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
NSP41A
TIP41B
3–883
NSP41B
TIP41B
3–883
NSP41C
TIP41C
3–883
NSP42
TIP42B
3–883
NSP42A
TIP42B
3–883
NSP42B
TIP42B
3–883
NSP42C
TIP42C
3–883
NSP4918
TIP32B
3–873
NSP4919
TIP32B
3–873
NSP4920
TIP32B
3–873
NSP4921
TIP31B
3–873
NSP4922
TIP31B
3–873
NSP4923
TIP31B
3–873
NSP5190
TIP31B
3–873
NSP5191
TIP31B
3–873
NSP5192
TIP31B
3–873
NSP5193
TIP32B
3–873
NSP5194
TIP32B
3–873
NSP5195
TIP32C
3–873
NSP520
TIP31B
3–873
NSP521
TIP31B
3–873
NSP575
TIP31B
3–873
NSP576
TIP32B
3–873
NSP577
TIP31B
3–873
NSP578
TIP32B
3–873
NSP579
TIP31B
3–873
NSP580
TIP32B
3–873
NSP581
TIP31C
3–873
NSP582
TIP32C
3–873
NSP585
TIP31B
3–873
NSP586
TIP32B
3–873
NSP587
TIP31B
3–873
NSP588
TIP32B
3–873
NSP589
TIP31B
3–873
NSP590
TIP32B
3–873
NSP595
TIP31B
3–873
NSP596
TIP32B
3–873
NSP597
TIP31B
3–873
NSP5974
TIP42B
3–883
NSP5975
TIP42B
3–883
NSP5976
TIP42B
3–883
NSP5977
TIP41B
3–883
NSP5978
TIP41B
3–883
NSP5979
TIP41B
3–883
NSP598
TIP32B
3–873
NSP5980
2N6490
3–132
NSP5981
2N6490
3–132
NSP5982
2N6491
3–132
NSP5983
2N6487
3–132
NSP5984
2N6487
3–132
NSP5985
2N6488
3–132
NSP599
TIP31B
3–873
NSP600
TIP32B
3–873
NSP695
TIP120
3–900
NSP695A
TIP101
3–891
NSP696
TIP125
3–900
NSP696A
TIP106
3–891
NSP697
TIP120
3–900
NSP697A
TIP101
3–891
NSP698
TIP125
3–900
NSP698A
TIP106
3–891
NSP699
TIP121
3–900
NSP699A
TIP101
3–891
NSP700
TIP126
3–900
NSP700A
TIP106
3–891
NSP701
TIP122
3–900
NSP702
TIP127
3–900
PMD10K–100
2N6059
3–93
PMD10K–40
2N6059
3–93
PMD10K–60
2N6059
3–93
PMD10K–80
2N6059
3–93
PMD11K–100
2N6052
3–93
PMD11K–40
2N6052
3–93
PMD11K–60
2N6052
3–93
PMD11K–80
2N6052
3–93
PMD12K–100
2N6059
3–93
PMD12K–40
MJ1000
3–423
PMD12K–60
MJ1000
3–423
PMD12K–80
MJ1001
3–423
PMD13K–100
2N6052
3–93
PMD1600K
2N6283
3–112
PMD1601K
2N6283
3–112
PMD1602K
2N6283
3–112
PMD1603K
2N6284
3–112
PMD16K–100
2N6284
3–112
PMD16K–40
2N6283
3–112
PMD16K–60
2N6283
3–112
PMD16K–80
2N6283
3–112
PMD1700K
2N6286
3–112
PMD1701K
2N6286
3–112
PMD1702K
2N6286
3–112
PMD1703K
2N6287
3–112
PMD17K–100
2N6287
3–112
PMD17K–40
2N6286
3–112
PMD17K–60
2N6284
3–112
PMD17K–80
2N6286
3–112
PMD20K–120
2N6578
3–144
PMD25K–120
2N6578
3–144
RCA1000
MJ1000
3–423
RCA1001
MJ1001
3–423
RCA120
TIP120
3–900
RCA121
TIP121
3–900
RCA122
TIP122
3–900
RCA125
TIP125
3–900
RCA126
TIP126
3–900
RCA1B01
2N5878
3–74
RCA1B04
MJ15024
3–506
RCA1B05
MJ15024
3–506
RCA1B06
MJ15003
3–500
RCA1B09
MJ15024
3–506
RCA1C03
MJE15028
3–684
RCA1C04
MJE15029
3–684
RCA1C05
TIP41B
3–883
RCA1C06
TIP42C
3–883
RCA1C07
MJE3055T
3–628
RCA1C08
MJE2955T
3–628
RCA1C09
MJE3055T
3–628
RCA1C10
2N6292
3–101
RCA1C11
2N6107
3–101
RCA1C12
MJE15028
3–684
RCA1C13
MJE15029
3–684
RCA1C14
2N6290
—
RCA1C15
2N6388
3–124
RCA1C16
2N6668
3–147
RCA29
TIP31B
3–873
RCA29A
TIP31B
3–873
相關PDF資料
PDF描述
BUL43BBU 2 A, 350 V, NPN, Si, POWER TRANSISTOR
BUS-65143-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CQIP78
BUS-65145-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, DFP78
BUS-65142-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CQIP78
BUS-65144-883B 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, DFP78
相關代理商/技術參數(shù)
參數(shù)描述
BUL44 功能描述:兩極晶體管 - BJT 2A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BUL44D2 制造商:Rochester Electronics LLC 功能描述:- Bulk
BUL44D2/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Speed， High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
BUL44F 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
BUL44G 功能描述:兩極晶體管 - BJT 2A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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