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參數(shù)資料
| 型號： | BULD118 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 高壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 71K |
| 代理商： | BULD118 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
μ
A
μ
A
V
EBO
Emitter-Base Voltage
I
E
= 10 mA
9
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Leakage Current
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
400
V
I
CEO
V
CE
= 400 V
250
μ
A
V
CE(sat)
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.4 A
0.5
1
1.5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.4 A
1.0
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA
I
C
= 0.5 A
I
C
= 2 A
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
10
10
8
50
t
r
t
f
t
s
RESISTIVE LOAD
Rise Time
Fall Time
Storage Time
group A
group B
VCC = 125 V
I
B1
= 0.4 A
t
p
= 30
μ
s
I
C
= 2 A
I
B2
= -0.2 A
1.4
2
0.7
0.3
0.5
2.1
2.75
μ
s
μ
s
μ
s
μ
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 1 A
V
BE
= -5 V
V
clamp
= 300 V
I
B1
= 0.2 A
L = 50 mH
0.8
0.10
μ
s
μ
s
V
F
Diode Forward Voltage IC = 1 A
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Note : Product is pre-selected in storage time(GROUP A and GROUP B).SGS-THOMSON reserves the right to ship either groups
according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.
2.5
V
BULD118D-1
2/7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULD118-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-251AA |
| BULD118D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULD118D-1 | 功能描述:TRANS NPN 400V 2A IPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| BULD118D-1_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| BULD125KC | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
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