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參數(shù)資料
| 型號(hào)： | BULD128D-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor(高壓快速開(kāi)關(guān)NPN功率晶體管) |
| 中文描述： | 高壓快速NPN電源開(kāi)關(guān)晶體管（高壓快速開(kāi)關(guān)npn型功率晶體管） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 78K |
| 代理商： | BULD128D-1 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
3.57
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
μ
A
μ
A
μ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
Emitter-Base Voltage
V
CE
= 400 V
250
V
EBO
I
E
= 10 mA
9
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
400
V
V
CE(sat)
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 4 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
I
B
= 1 A
0.5
0.7
1.0
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
1.1
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA
I
C
= 2 A
V
CE
= 5 V
V
CE
= 5 V
10
8
40
V
f
Forward Voltage Drop
I
f
= 2 A
2.5
V
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
CC
= 200 V
I
B1
= 0.4 A
R
BB
= 0
L = 200
μ
H
(see fig.1)
V
CC
= 250 V
I
B1
= 0.4 A
T
p
= 30
μ
s
(see fig.2)
I
C
= 2 A
V
BE(off)
= -5 V
0.6
0.1
μ
s
μ
s
t
s
t
f
RESISTIVE LOAD
Storage Time
BULD128DA-1
BULD128DB-1
Fall Time
I
C
= 2 A
I
B2
= -0.4 A
1.7
2
0.2
2.5
2.9
μ
s
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Note : Ordering Codes:
BULD128DA-1
BULD128DB-1
Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.
BULD128D-1
2/7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BULD128DA1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA |
| BULD128DB1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251AA |
| BULD128DT4 | 功能描述:兩極晶體管 - BJT PWR BIP/S.SIGNAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BULD138 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| BULD138-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-251 |
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