參數(shù)資料
型號: BULK128D
廠商: 意法半導體
英文描述: High Voltage Fast-Switching NPN Power Transistor(高壓快速開關NPN功率晶體管)
中文描述: 高壓快速NPN電源開關晶體管(高壓快速開關npn型功率晶體管)
文件頁數(shù): 2/7頁
文件大小: 82K
代理商: BULK128D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
2.27
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
μ
A
μ
A
μ
A
I
CEO
Collector-Emitter
Leakage Current
(I
B
= 0)
Emitter-Base Voltage
V
CE
= 400 V
250
V
EBO
I
E
= 10 mA
9
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
I
C
= 100 mA
L = 25 mH
400
V
V
CE(sat)
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
0.7
1.0
1.5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A
I
C
= 1 A
I
C
= 2.5 A
I
B
= 0.1 A
I
B
= 0.2 A
I
B
= 0.5 A
1.1
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA
I
C
= 2 A
V
CE
= 5 V
V
CE
= 5 V
10
8
V
f
Forward Voltage Drop
I
f
= 2 A
2.5
V
t
s
t
f
RESISTIVE LOAD
Storage Time
BULK128D-A
BULK128D-B
Fall Time
V
CC
= 250 V
I
B1
= 0.4 A
T
p
= 30
μ
s
(see fig. 2)
I
C
= 2 A
I
B2
= -0.4 A
1.7
2.0
0.2
2.5
2.9
μ
s
μ
s
μ
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
Cl
= 200 V
I
B1
= 0.4 A
R
BB
= 0
L = 200
μ
H
(see fig. 1)
I
C
= 2 A
V
BE(off)
= -5 V
0.6
0.1
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Note: Orderingcodes:
- BULK128D-A
- BULK128D-B.
Please contact your nearest ST Microelectronics salesoffice for delivery details.
BULK128D
2/7
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BULT118D RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 15V; 2:1 Wide Input Voltage Range; 20 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 89%
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