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參數(shù)資料
| 型號(hào)： | BUT100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High Power NPN Silicon Transistor(高功率NPN硅晶體管) |
| 中文描述： | 高功率NPN硅晶體管（高功率npn型硅晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUT100 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.58
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
Collector Cut-off
Current
V
CE
= V
CEV
V
CE
= V
CEV
T
C
= 100
o
C
1
5
mA
mA
I
CEV
V
CE
= V
CEV
V
BE
= -1.5V
V
CE
= V
CEV
V
BE
= -1.5V TC = 100
o
C
1
4
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
EB
= 5 V
1
mA
I
C
= 0.2 A
L = 25mH
I
E
= 50mA
125
V
7
V
I
C
= 50A I
B
= 2.5A
I
C
= 100A I
B
= 10A
I
C
= 50A I
B
= 2.5A T
j
= 100
o
C
I
C
= 100A I
B
= 10A T
j
= 100
o
C
I
C
= 50A I
B
= 2.5A
I
C
= 100A I
B
= 10A
I
C
= 50A I
B
= 2.5A T
j
= 100
o
C
I
C
= 100A I
B
= 10A T
j
= 100
o
C
V
CC
= 100V R
C
= 0 I
B1
= 5A
T
p
= 3
μ
s T
j
= 100
o
C
0.9
0.9
1.2
1.5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
1.4
2
1.4
2.1
V
V
V
V
di
c
/dt
Rate of Rise of
on-state Collector
Current
INDUCTIVE LOAD
Storage time
Fall Time
Crossover Time
180
A/
μ
s
t
s
t
f
t
c
V
CC
= 90V V
clamp
= 125 V
I
C
= 50A I
B1
= 2.5A
V
BB
= - 5V L
C
= 80
μ
H
R
B2
= 1
T
j
= 100
o
C
2
0.2
0.35
μ
s
μ
s
μ
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
V
CC
= 90V I
CWoff =
150A
VBB
= - 5V I
B1
= 10A
L
C
= 30
μ
H R
B2
= 1
T
j
= 125
o
C
125
V
Pulsed: Pulse duration = 3
μ
s, duty cycle = 2 %
BUT100
2/4
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