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參數(shù)資料
| 型號(hào)： | BUT232V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NPN Transistor Power Module(NPN晶體管功率模塊) |
| 中文描述： | NPN晶體管功率模塊（npn型晶體管功率模塊） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | BUT232V |
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.41
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
Collector Cut-off
Current (V
BE
= -1.5)
Emitter Cut-off Current
(I
C
= 0)
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
T
j
= 100
o
C
1
5
mA
mA
I
CEV
T
j
= 100
o
C
1
4
mA
mA
I
EBO
1
mA
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
h
FE
DC Current Gain
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.2 A
V
clamp
= 300 V
I
C
= 70 A
I
C
= 35 A
I
C
= 35 A
I
C
= 70 A
I
C
= 70 A
I
C
= 70 A
I
C
= 70 A
V
CC
= 300 V
I
B1
= 10 A
V
CC
= 200 V
I
B1
= 6.4 A
V
CC
= 200 V
I
B1
= 6.4 A
I
C
= 70 A
V
BB
= -5 V
V
clamp
= 300 V
L = 0.3 mH
I
CWoff
= 105 A
V
BB
= -5 V
L = 42
μ
H
T
j
= 125
o
C
L = 25 mH
300
V
V
CE
= 5 V
I
B
= 1.75 A
I
B
= 1.75 A
I
B
= 7 A
I
B
= 7 A
I
B
= 7 A
I
B
= 7 A
R
C
= 0
T
j
= 100
o
C
R
C
= 3.25
T
j
= 100
C
R
C
= 3.25
T
j
= 100
o
C
V
CC
= 250 V
R
BB
= 0.6
I
B1
= 7 A
T
j
= 100
o
C
I
B1
= 7 A
V
CC
= 50 V
R
BB
= 0.6
17
T
j
= 100
o
C
T
j
= 100
o
C
0.5
0.7
0.5
0.9
1.9
1.9
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
T
j
= 100
o
C
t
p
= 3
μ
s
1.1
1
1.3
V
V
di
C
/dt
Rate of Rise of
On-state Collector
120
190
A/
μ
s
V
CE
(3
μ
s) Collector-Emitter
Dynamic Voltage
V
CE
(5
μ
s) Collector-Emitter
Dynamic Voltage
t
s
t
f
t
c
Cross-over Time
2.5
4
V
1.4
2.5
V
Storage Time
Fall Time
3
0.25
0.6
5
0.4
0.9
μ
s
μ
s
μ
s
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
300
V
Pulsed:Pulseduration = 300
μ
s,duty cycle1.5 %
BUT232V
2/7
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|---|---|
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