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參數(shù)資料
| 型號： | BUV298V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NPN Transistor Power Module(NPN晶體管功率模塊) |
| 中文描述： | NPN晶體管功率模塊（npn型晶體管功率模塊） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 103K |
| 代理商： | BUV298V |
THERMAL DATA
R
thj-case
R
thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
Collector Cut-off
Current (V
BE
= -5V)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
0.4
2
mA
mA
I
CEV
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
0.4
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
h
FE
DC Current Gain
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.2 A
V
clamp
= 450 V
I
C
= 32 A
L = 25 mH
450
V
V
CE
= 5 V
12
I
C
= 32 A
I
C
= 32 A
I
B
= 6.4 A
I
B
= 6.4 A
T
j
= 100
o
C
0.35
0.6
1.2
2
V
V
I
C
= 32 A
I
C
= 32 A
I
B
= 6.4 A
I
B
= 6.4 A
T
j
= 100
o
C
1
0.9
1.5
1.5
V
V
di
C
/dt
Rate of Rise of
On-state Collector
V
CC
= 300 V
I
B1
= 9.6 A
V
CC
= 300 V
I
B1
= 9.6 A
R
C
= 0
T
j
= 100
o
C
R
C
= 9.3
T
j
= 100
C
R
C
= 9.3
T
j
= 100
C
t
p
= 3
μ
s
160
210
A/
μ
s
V
CE
(3
μ
s)
Collector-Emitter
Dynamic Voltage
4.5
8
V
V
CE
(5
μ
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V
I
B1
= 9.6 A
2.5
4
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross-over Time
I
C
= 32 A
V
BB
= -5 V
V
clamp
= 450 V
L = 78
μ
H
I
CWoff
= 48 A
V
BB
= -5 V
L = 52
μ
H
T
j
= 125
o
C
V
CC
= 50 V
R
BB
= 0.39
I
B1
= 6.4 A
T
j
= 100
o
C
I
B1
= 6.4 A
V
CC
= 50 V
R
BB
= 0.39
3.2
0.25
0.5
4.5
0.4
0.7
μ
s
μ
s
μ
s
V
CEW
Maximum Collector
Emitter Voltage
Without Snubber
450
V
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BUV298V
2/7
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