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參數(shù)資料
| 型號： | BUW13F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 105K |
| 代理商： | BUW13F |
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
ISOLATION CHARACTERISTICS
Note
1.
Repetitive peak operation with RH
≤
65% under clean and dust-free conditions.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
3.4
2.5
35
K/W
K/W
K/W
note 2
R
th j-a
thermal resistance from junction to ambient
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW13F
BUW13AF
collector-emitter voltage
BUW13F
BUW13AF
collector saturation current
BUW13F
BUW13AF
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
V
BE
= 0
850
1000
V
V
V
CEO
open base
400
450
V
V
I
Csat
65
10
8
15
30
6
9
37
50
+150
150
A
A
A
A
A
A
W
W
°
C
°
C
I
C
I
CM
I
B
I
BM
P
tot
see Figs 3 and 4
t
p
< 20 ms; see Fig 4
t
p
=
20 ms
T
h
≤
25
°
C; see Fig.2; note 1
T
h
≤
25
°
C; see Fig.2; note 2
T
stg
T
j
storage temperature
junction temperature
SYMBOL
PARAMETER
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value); note 1 2000
isolation capacitance from collector to external heatsink
V
pF
21
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相關(guān)代理商/技術(shù)參數(shù) |
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| BUW13W | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BUW14 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUW19 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30A I(C) |
| BUW22 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
| BUW22A | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
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