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參數(shù)資料
| 型號(hào)： | BUW14 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 0.5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BUW14 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
EB
= 5 V; I
= 0 A
I
C
= 100 mA;
L = 25 mH
I
C
= 0.1 A; I
B
= 10 mA
I
C
= 0.2 A; I
B
= 20 mA
I
C
= 0.2 A; I
= 20 mA
I
C
= 50 mA; V
CE
= 5 V
I
C
= 300 mA; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
100
1.0
UNIT
μ
A
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1.0
-
mA
V
450
V
CEsat
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltages
-
-
-
-
-
0.8
1.0
1.0
-
100
V
V
V
Base-emitter saturation voltage
DC current gain
50
50
25
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
f
T
Transition frequency
Switching times (resistive load circuit) I
Con
= 0.2 A; I
= 20 mA;
CONDITIONS
I
C
= 0.2 A; V
CE
= 10 V; f = 1 MHz
TYP.
20
MAX.
-
UNIT
MHz
-I
Boff
= 40 mA; V
CC
= 250 V
t
on
t
s
t
f
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Turn-off fall time
0.4
3.5
0.4
-
0.7
5.0
-
1.3
μ
s
μ
s
μ
s
μ
s
T
mb
= 95 C
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2
Measured with half sine-wave voltage (curve tracer).
March 1992
2
Rev 1.000
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