- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382873 > BUW90 (意法半導體) High Power NPN Silicon Transistor(高功率NPN硅晶體管) PDF資料下載
參數(shù)資料
| 型號： | BUW90 |
| 廠商： | 意法半導體 |
| 英文描述： | High Power NPN Silicon Transistor(高功率NPN硅晶體管) |
| 中文描述： | 高功率NPN硅晶體管（高功率npn型硅晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BUW90 |
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
Collector Cut-off
Current
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
1
5
mA
mA
I
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
BE
= -1.5V
V
BE
= - 1.5V T
C
=100
o
C
1
5
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter-base
Voltage (I
c
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.2A
L = 25 mH
I
E
= 50 mA
125
V
7
V
I
C
= 5.5 A
I
C
= 11 A
I
C
= 5.5
I
C
= 11 A
I
B
= 0.35 A
I
B
= 1.1 A
I
B
= 0.35 A
I
B
= 1.1 A
T
j
= 100
o
C
T
j
= 100
o
C
0.5
0.65
0.5
0.8
0.8
0.9
0.9
1.2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 11 A
I
C
= 11 A
I
B
= 1.1 A
I
B
= 1.1 A
T
j
= 100
o
C
1.3
1.35
1.6
1.7
V
V
di
c
/d
t
Rated of Rise of
on-state Collector
Current
V
CC
= 100 V
R
C
= 0
I
B1
= 1.65 A
T
j
= 25
o
C
T
j
= 100
o
C
35
30
45
40
A/
μ
s
A/
μ
s
V
CE(2
μ
s)
Collector Emitter
Dynamic Voltage
V
CC
= 100 V
R
C
= 9
I
B1
= 1.1 A
T
j
= 25
o
C
T
j
= 100
o
C
R
C
= 9
Ι
B1
= 1.1 A
2
2.6
2.5
4
V
V
V
CE(4
μ
s)
Collector Emitter
Dynamic Voltage
V
CC
= 100 V
T
j
= 25
C
T
j
= 100
o
C
1.1
1.6
2
2.5
V
V
Pulsed: Pulse duration = 300
μ
s, duty cycle < 2 %
RESISTIVELOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
μ
s
μ
s
μ
s
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 100 V
V
BB
= -5 V
R
B2
= 1.3
I
C
= 15 A
I
B1
= 1.8 A
t
p
= 30
μ
s
0.4
0.6
0.14
1
1
0.3
BUW90
2/5
相關PDF資料 |
PDF描述 |
|---|---|
| BUX12 | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| BUX22 | High Current NPN Silicon Transistor(高電流NPN硅晶體管) |
| BUX48 | High Power NPN Silicon Transistors(高功率NPN硅晶體管) |
| BUX87 | High Voltage Silicon Power Transistor(高電壓硅功率晶體管) |
| BUX98AP | High Power NPN Silicon Transistor(高功率NPN硅晶體管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUW96 | 制造商:STMicroelectronics 功能描述: |
| BUWEPSDWG1572237 | 制造商:GECO 功能描述: 制造商:General Electric Company 功能描述: |
| BUWEPSDWG2262957 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| BU-WH2400 | 制造商:Cooper Bussmann 功能描述:DEMO WHIP - Bulk 制造商:COOPER BUSSMANN 功能描述:DEMO WHIP |
| BU-WH900-SMA | 制造商:Cooper Bussmann 功能描述:DEMO WHIP ANTENNA, 4" SMA CONNECTOR - Bulk 制造商:COOPER BUSSMANN 功能描述:DEMO WHIP ANTENNA, 4 SMA CONNECTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。