參數(shù)資料
型號(hào): BY559-1500
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Rectifier diode fast, high-voltage
中文描述: 10 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: PLASTIC PACKAGE-2
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 33K
代理商: BY559-1500
Philips Semiconductors
Objective specification
Rectifier diode
fast, high-voltage
BY559-1500
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Low forward recovery voltage
Fast switching
Soft recovery characteristic
High thermal cycling performance
Low thermal resistance
V
R
= 1500 V
V
F
1.2 V
V
fr
14 V
t
fr
250 ns
I
F(AV)
= 10 A
I
FSM
100 A
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
rectifierdiode featuringfastforward
recovery and low forward recovery
voltage. The device is intended for
useinmulti-sync monitorhorizontal
deflection circuits with maximum
scan rates from 82 kHz to 120 kHz.
PIN
DESCRIPTION
1
cathode
2
anode
tab
cathode
The BY559 series is supplied in the
conventional
leaded
(TO220AC) package.
SOD59
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V
RRM
Peak repetitive reverse voltage
V
RWM
Crest working reverse voltage
I
FWM
Peak working forward current
I
FRM
Peak repetitive forward current
I
FSM
Peak non-repetitive forward
current
CONDITIONS
MIN.
-
-
-
-
-
-
MAX.
1500
1300
10
150
180
200
UNIT
V
V
A
A
A
A
f = 120 kHz;
t = 100
μ
s
t = 10 ms
t = 8.3 ms
sinusoidal; T
= 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
T
j
Storage temperature
Operating junction temperature
-40
-
150
150
C
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.0
UNIT
K/W
in free air
-
60
-
K/W
k
1
a
2
1
tab
2
September 1998
1
Rev 1.100
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