參數(shù)資料
型號: BYD11M
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Controlled avalanche rectifiers
中文描述: 0.5 A, SILICON, SIGNAL DIODE
文件頁數(shù): 5/7頁
文件大小: 46K
代理商: BYD11M
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
Solid line: T
j
= 25
°
C.
Dotted line: T
j
= 175
°
C.
Fig.6
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
IF
(A)
0
3
1
0
2
MBG047
VF (V)
2
1
Fig.7
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
100
10
1
10
o
Tj
C
(
)
MCD582
IR
3
2
(
μ
A)
V
R
= V
RRMmax
.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
1
MBG025
10
10
2
10
3
10
1
1
1
Cd
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
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