參數(shù)資料
型號: BYQ30ED-200
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/8頁
文件大?。?/td> 62K
代理商: BYQ30ED-200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30E, BYQ30EB, BYQ30ED series
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Circuit schematic for t
rr2
Fig.5. Definition of t
rr2
Fig.6. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
time
time
VF
Vfr
VF
IF
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
0
2
4
6
8
10
12
0
2
4
6
8
10
12
0.5
0.2
0.1
BYQ30
Rs = 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
D = 1.0
150
144
138
132
126
120
114
D =
t
p
t
p
T
T
t
I
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYQ30
Rs 0.025 Ohms
Vo = 0.75 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
144
138
132
126
120
114
October 1998
3
Rev 1.200
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