參數(shù)資料
型號: BYR29-700
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast
中文描述: 8 A, 700 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 2/5頁
文件大?。?/td> 43K
代理商: BYR29-700
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29 series
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
30 V;
dI
/dt = 50 A/
μ
s; T
= 100 C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
TYP.
1.07
1.75
1.0
0.1
150
MAX.
1.50
1.95
10
0.2
200
UNIT
V
V
μ
A
mA
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
60
75
ns
I
rrm
Peak reverse recovery current
-
-
6
A
V
fr
Forward recovery voltage
-
5.0
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
= f(I
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
2
4
6
8
10
12
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
137.5
125
100
112.5
Vo = 1.26 V
Rs = 0.03 Ohms
D =
t
p
t
p
T
T
t
I
time
time
VF
Vfr
VF
IF
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYR29
IF(AV) / A
PF / W
Vo = 1.26 V
Tmb(max) / C
150
130
140
120
Rs = 0.03 Ohms
September 1998
2
Rev 1.300
相關PDF資料
PDF描述
BYR29 Rectifier diodes ultrafast
BYT01 Ultra low drop voltage regulators with inhibit low ESR output capacitors compatible
BYT01-400RL Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible
BYT03 Very low drop and low noise voltage regulator with inhibit function, low ESR capacitors compatible
BYT03-400RL Very low drop and low noise voltage regulator low ESR capacitors compatible, with inhibit function
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