參數(shù)資料
型號: BYR29
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast
中文描述: 8 A, 800 V, SILICON, RECTIFIER DIODE
封裝: TO-220AC, 2 PIN
文件頁數(shù): 2/5頁
文件大小: 43K
代理商: BYR29
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYR29 series
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 20 A
V
R
= V
RRM
V
= V
; T
j
= 100 C
I
F
= 2 A to V
R
30 V;
dI
/dt = 20 A/
μ
s
I
F
= 1 A to V
30 V;
dI
/dt = 100 A/
μ
s
I
F
= 10 A to V
R
30 V;
dI
/dt = 50 A/
μ
s; T
= 100 C
I
F
= 10 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
TYP.
1.07
1.75
1.0
0.1
150
MAX.
1.50
1.95
10
0.2
200
UNIT
V
V
μ
A
mA
nC
I
R
Reverse current
Q
s
Reverse recovery charge
t
rr
Reverse recovery time
-
60
75
ns
I
rrm
Peak reverse recovery current
-
-
6
A
V
fr
Forward recovery voltage
-
5.0
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
= f(I
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs
100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
0
2
4
6
8
10
12
0
5
10
15
20
D = 1.0
0.5
0.2
0.1
BYR29
IF(AV) / A
PF / W
Tmb(max) / C
150
137.5
125
100
112.5
Vo = 1.26 V
Rs = 0.03 Ohms
D =
t
p
t
p
T
T
t
I
time
time
VF
Vfr
VF
IF
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BYR29
IF(AV) / A
PF / W
Vo = 1.26 V
Tmb(max) / C
150
130
140
120
Rs = 0.03 Ohms
September 1998
2
Rev 1.300
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PDF描述
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