參數(shù)資料
型號(hào): BYV2100
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hook-Up Wire; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述: 1.3 A, 100 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 52K
代理商: BYV2100
1996 Oct 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifier
BYV2100
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
100
100
2.0
V
V
A
T
tp
= 80
°
C; lead length = 10 mm;
averaged over any 20 ms period;
see Fig.2; see also Fig.4
T
amb
= 60
°
C; PCB mounting
(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4
T
tp
= 80
°
C; see Fig.6
T
amb
= 60
°
C; see Fig.7
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
1.3
A
I
FRM
repetitive peak forward current
18
12
50
A
A
A
I
FSM
non-repetitive peak forward current
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
20
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
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