參數(shù)資料
型號: BYV72EF-200
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Color:Brown; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/6頁
文件大?。?/td> 40K
代理商: BYV72EF-200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air
MIN.
TYP.
MAX.
UNIT
-
-
-
-
4.0
8.0
K/W
K/W
-
-
-
-
-
5.0
9.0
-
K/W
K/W
K/W
R
th j-a
Thermal resistance junction to
ambient
35
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 15 A; T
j
= 150C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
F
= 0.5 A to I
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
6
20
MAX.
0.90
1.05
1.20
1
100
15
28
UNIT
V
V
V
mA
μ
A
nC
ns
I
R
Reverse current
Q
s
t
rr1
Reverse recovery charge
Reverse recovery time
t
rr2
V
fr
Reverse recovery time
Forward recovery voltage
-
-
13
1
22
-
ns
V
July 1998
2
Rev 1.100
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