參數(shù)資料
型號： BYV99
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Light Blue; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
中文描述： 0.55 A, 600 V, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 3/8頁
文件大?。?/td> 53K
代理商： BYV99
1996 Feb 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.10.
For more information please refer to the “General Part of associated Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
700
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig. 7
I
F
= 1 A; see Fig. 7
I
R
= 0.1 mA
1.5
2.7
V
V
V
V
(BR)R
reverse avalanche
breakdown voltage
reverse current
I
R
V
R
= V
RRMmax
;
see Fig. 8
V
R
= V
RRMmax
; T
j
= 150
°
C;
see Fig. 8
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig. 12
f = 1 MHz; V
R
= 0 V; see Fig. 9
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
1 A/
μ
s;
see Fig.11
5
μ
A
75
μ
A
t
rr
reverse recovery time
15
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse
recovery current
75
pF
A/
μ
s
3
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
100
K/W
K/W
--------
相關(guān)PDF資料
PDF描述
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