參數(shù)資料
型號: BYW28-500
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Ultra fast low-loss controlled avalanche rectifier
中文描述: 1.7 A, 500 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 3/12頁
文件大?。?/td> 83K
代理商: BYW28-500
1997 Nov 26
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYW28 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.11.
For more information please refer to the ‘General Part of Handbook SC01’
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 3.5 A; T
j
= T
j max
; see Fig.8
I
F
= 3.5 A; see Fig.8
I
R
= 0.1 mA
0.90
1.15
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYW28-500
BYW28-600
reverse current
560
675
V
V
μ
A
μ
A
I
R
V
R
= V
RRMmax
; see Fig.9
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.9
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.12
f = 1 MHz; V
R
= 0; see Fig.10
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
1 A/
μ
s;
see Fig.13
5
150
t
rr
reverse recovery time
50
ns
C
d
dI
R
dt
diode capacitance
maximum slope of reverse
recovery current
275
pF
A/
μ
s
4
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
20
70
K/W
K/W
--------
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