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參數(shù)資料
| 型號： | BYX135G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Dark Blue; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 3173; CSA Type CL1251; Conductor Material:Copper RoHS Compliant: Yes |
| 中文描述： | 0.05 A, 5000 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | BYX135G |
2000 Feb 29
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
BYX135G
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD61AD2 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
TheBYX135Gismarkedwithagreencathodebandonthe
body.
handbook, halfpage
a
MBK908
Fig.1 Simplified outline (SOD61AD2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
RWM
I
F(AV)
I
RSM
repetitive peak reverse voltage
crest working reverse voltage
average forward current
non-repetitive peak reverse current
5
5
50
50
kV
kV
mA
mA
t = 100
μ
s triangular pulse;
T
j max
prior to surge
T
stg
T
j
T
j
storage temperature
junction temperature
junction temperature
65
+200
175
200
°
C
°
C
°
C
continuous
max. 30 min.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
V
(BR)R
I
R
forward voltage
reverse avalanche breakdown voltage
reverse current
I
F
= 10 mA
I
R
= 100
μ
A
V
R
= V
RWMmax
; T
j
= 175
°
C
6.25
7
8.75
9.5
30
V
kV
μ
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
T
amb
= T
leads
; lead length = 10 mm
90
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BYX135GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:High-voltage car ignition diode |
| BYX25-1000R | 制造商:n/a 功能描述:Diode, Reverse Polarity |
| BYX25-1200R | 制造商:n/a 功能描述:Diode, Reverse Polarity |
| BYX25-1500 | 制造商:n/a 功能描述:Diode |
| BYX25-1500R | 制造商:n/a 功能描述:Diode, Reverse Polarity |
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