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參數(shù)資料
| 型號(hào)： | BZW06-8V5B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSIL Diode for High Overvoltage Protection(600W、用于過(guò)電壓保護(hù)的TRANSIL二極管(雙向)) |
| 中文描述： | TRANSIL二極管（600W，用于過(guò)電壓保護(hù)的TRANSIL二極管（雙向），高過(guò)電壓保護(hù)） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | BZW06-8V5B |
BZW06-5V8/376
BZW06-5V8B/376B
TRANSIL
TM
PEAK PULSEPOWER : 600W (10/1000
μ
s)
STAND-OFF VOLTAGERANGE:
From5.8V to376 V
UNI ANDBIDIRECTIONALTYPES
LOW CLAMPINGFACTOR
FASTRESPONSETIME
UL RECOGNIZED
FEATURES
F126
Symbol
Parameter
Value
Unit
P
PP
Peak pulsepower dissipation(seenote 1)
Tj initial= Tamb
600
W
P
Powerdissipationon infiniteheatsink
T
amb
= 75
°
C
1.7
W
I
FSM
Non repetitivesurge peakforwardcurrent
forunidirectional types
tp = 10ms
Tj initial= T
amb
100
A
T
stg
T
j
Storagetemperaturerange
Maximumjunction temperature
- 65 to+ 175
175
°
C
°
C
T
L
Maximumlead temperaturefor solderingduring10s a 5mm
fromcase.
230
°
C
Note 1
: Fora surge greater than the maximum values,the diode will fail in short-circuit.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25
°
C)
DESCRIPTION
Transildiodes provide high overvoltageprotection
by clamping action. Their instantaneousresponse
to transientovervoltagesmakesthem particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
January 1998 Ed : 2
Symbol
Parameter
Value
Unit
R
th (j-l)
Junctionto leads
60
°
C/W
°
C/W
R
th (j-a)
Junctionto ambienton printedcircuit.
L
lead
= 10 mm
100
THERMALRESISTANCES
1/6
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