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| 型號(hào)： | C470XR260-Sxx00-A |
| 廠商： | Cree, Inc. |
| 英文描述： | XT⑩ Rectangular LEDs |
| 中文描述： | 矩形發(fā)光二極管xT配對(duì)⑩ |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | C470XR260-SXX00-A |
Copyright 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree
logo, GSiC, XBright and XThin are registered trademarks, and XT, XR-18 and XR-21 are trademarks of Cree, Inc.
2
CPR3CZ Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
CxxxXR230-Sxx00-A
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
Note 2
1000 V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 20 mA
Note 3
Part Number
Forward Voltage (V
f
, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(
λ
D
, nm)
Min.
Typ.
Max.
Max.
Typ.
C460XR260-S
xx
00-A
2.7
3.2
3.7
2
21
C470XR260-S
xx
00-A
2.7
3.2
3.7
2
22
Mechanical Specifications
CxxxXR230-Sxx00-A
Description
Dimension
Tolerance
P-N Junction Area (μm)
180 x 340
± 25
Top Area (μm)
130 x 280
± 25
Bottom Area (μm)
230 x 380
± 25
Chip Thickness (μm)
150
± 15
Au Bond Pad Diameter (μm)
105
-5, +15
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Area (μm)
140 x 300
± 15
Back Contact Metal Thickness (μm)
(Au/Sn)
Note 4
1.7
± 0.3
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds). See Cree XThin Applications Note for more assembly process information.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright
Applications Note for detailed packaging recommendations.
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip. See Cree XThin Applications Note for more information.
Specifications are subject to change without notice.
XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach.
2.
3.
4.
5.
6.
7.
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