參數(shù)資料
型號: C67078-S3130-A2
廠商: SIEMENS AG
英文描述: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
中文描述: SIPMOS功率晶體管(N通道增強(qiáng)模式雪崩級)
文件頁數(shù): 1/9頁
文件大小: 221K
代理商: C67078-S3130-A2
Semiconductor Group
1
07/96
BUZ 334
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 334
V
DS
600 V
I
D
12 A
R
DS(on
)
0.5
Package
TO-218 AA
Ordering Code
C67078-S3130-A2
Maximum Ratings
Parameter
Continuous drain current
T
C
= 26 °C
Pulsed drain current
T
C
= 25 °C
Avalanche current,limited by T
jmax
Avalanche energy,periodic limited by T
jmax
Avalanche energy, single pulse
I
D
= 12 A, V
DD
= 50 V, R
GS
= 25
L = 11.8 mH, T
j
= 25 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
I
D
Values
Unit
A
12
I
Dpuls
48
12
18
I
AR
E
AR
E
AS
mJ
930
±
20
V
GS
P
tot
V
W
180
-55 ... + 150
-55 ... + 150
0.7
75
E
55 / 150 / 56
T
j
T
stg
R
thJC
R
thJA
°C
K/W
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