參數(shù)資料
型號(hào): C8051F533A-IM
廠商: Silicon Laboratories Inc
文件頁(yè)數(shù): 19/220頁(yè)
文件大小: 0K
描述: IC 8051 MCU 4K FLASH 20QFN
產(chǎn)品培訓(xùn)模塊: Serial Communication Overview
標(biāo)準(zhǔn)包裝: 91
系列: C8051F53x
核心處理器: 8051
芯體尺寸: 8-位
速度: 25MHz
連通性: LIN,SPI,UART/USART
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,PWM,溫度傳感器,WDT
輸入/輸出數(shù): 16
程序存儲(chǔ)器容量: 4KB(4K x 8)
程序存儲(chǔ)器類(lèi)型: 閃存
RAM 容量: 256 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 5.25 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 20-VFQFN 裸露焊盤(pán)
包裝: 管件
配用: 336-1488-ND - KIT DEV C8051F53XA, C8051F52XA
336-1457-ND - ADAPTER PROG TOOLSTICK F530TPP
336-1456-ND - ADAPTER PROG TOOLSTICK F530MPP
其它名稱(chēng): 336-1497-5
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Rev. 1.4
115
C8051F52x/F53x
12.2. Flash Write and Erase Guidelines
Any system which contains routines which write or erase Flash memory from software involves some risk
that the write or erase routines will execute unintentionally if the CPU is operating outside its specified
operating range of VDD, system clock frequency, or temperature. This accidental execution of Flash modi-
fying code can result in alteration of Flash memory contents causing a system failure that is only recover-
able by re-Flashing the code in the device.
The following guidelines are recommended for any system which contains routines which write or erase
Flash from code.
12.2.1. VDD Maintenance and the VDD monitor
1. If the system power supply is subject to voltage or current "spikes," add sufficient transient protection
devices to the power supply to ensure that the supply voltages listed in the Absolute Maximum Ratings
table are not exceeded.
2. Make certain that the maximum VDD ramp time specification (if applicable) is met. See Section 20.4 on
page 211 for more details on VDD ramp time. If the system cannot meet this ramp time specification,
then add an external VDD brownout circuit to the RST pin of the device that holds the device in reset
until VDD reaches the minimum specified VDD and re-asserts RST if VDD drops belowthat level.
VDD (min) is specified in Table 2.2 on page 26.
3. Enable the on-chip VDD monitor (VDDMON0) and enable it as a reset source as early in code as
possible. This should be the first set of instructions executed after the Reset Vector. For C-based
systems, this will involve modifying the startup code added by the C compiler. See your compiler
documentation for more details. Make certain that there are no delays in software between enabling the
VDD monitor (VDDMON0) and enabling it as a reset source. Code examples showing this can be found
in “AN201: Writing to Flash from Firmware", available from the Silicon Laboratories web site.
4. As an added precaution, explicitly enable the VDD monitor (VDDMON0) and enable the VDD monitor as
a reset source inside the functions that write and erase Flash memory. The VDD monitor enable
instructions should be placed just after the instruction to set PSWE to a 1, but before the Flash write or
erase operation instruction.
5. Make certain that all writes to the RSTSRC (Reset Sources) register use direct assignment operators
and explicitly DO NOT use the bit-wise operators (such as AND or OR). For example, "RSTSRC =
0x02" is correct. "RSTSRC |= 0x02" is incorrect.
6. Make certain that all writes to the RSTSRC register explicitly set the PORSF bit to a 1. Areas to check
are initialization code which enables other reset sources, such as the Missing Clock Detector or
Comparator, for example, and instructions which force a Software Reset. A global search on "RSTSRC"
can quickly verify this.
12.2.2. PSWE Maintenance
1. Reduce the number of places in code where the PSWE bit (PSCTL.0) is set to a 1. There should be
exactly one routine in code that sets PSWE to a 1 to write Flash bytes and one routine in code that sets
PSWE and PSEE both to a 1 to erase Flash pages.
2. Minimize the number of variable accesses while PSWE is set to a 1. Handle pointer address updates
and loop variable maintenance outside the "PSWE = 1;... PSWE = 0;" area. Code examples showing
this can be found in “AN201: Writing to Flash from Firmware," available from the Silicon Laboratories
web site.
3. Disable interrupts prior to setting PSWE to a 1 and leave them disabled until after PSWE has been
reset to '0'. Any interrupts posted during the Flash write or erase operation will be serviced in priority
order after the Flash operation has been completed and interrupts have been re-enabled by software.
4. Make certain that the Flash write and erase pointer variables are not located in XRAM. See your
compiler documentation for instructions regarding how to explicitly locate variables in different memory
areas.
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C8051F533A-IMR 功能描述:8位微控制器 -MCU 25 MIPS 4 kB 256 SPI UART LIN RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
C8051F533A-IT 功能描述:8位微控制器 -MCU 4KB 12ADC 125C MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
C8051F533A-ITR 功能描述:8位微控制器 -MCU 25 MIPS 4 kB 256 SPI RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
C8051F533-C-IM 制造商:Silicon Laboratories Inc 功能描述:25 MIPS, 4 KB, 256, SPI, UART, LIN 2.1, QFN20 - Rail/Tube 制造商:Silicon Laboratories Inc 功能描述:IC MCU 8051 4KB FLASH 20QFN
C8051F533-C-IMR 制造商:Silicon Laboratories Inc 功能描述:25 MIPS, 4 KB, 256, SPI, UART, LIN 2.1, QFN20 - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC MCU 8051 4KB FLASH 20QFN