Collector-to-Emitter Voltage, VCEO
參數(shù)資料
型號(hào)： CA3102M
廠商： Intersil
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 0K
描述： IC OP AMP DUAL HI FREQ 14-SOIC
標(biāo)準(zhǔn)包裝： 50
放大器類型： 差分
電路數(shù)： 2
增益帶寬積： 1.35GHz
電流 - 輸入偏壓： 13.5µA
電壓 - 輸入偏移： 250µV
工作溫度： -55°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 14-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 14-SOIC
包裝： 管件
2
611.7
October 12, 2005
Absolute Maximum Ratings
Thermal Information
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . . 20V
Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θ
JA (
oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
110
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
205
Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3102 is isolated from the substrate by an integral diode. The substrate (Terminal 9) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
Input Offset Voltage (Figures 1, 4)
VIO
-
0.25
5.0
mV
Input Offset Current (Figure 1)
IIO
I3 = I9 = 2mA
-
0.3
3.0
μA
Input Bias Current (Figures 1, 5)
IB
-
13.5
33
μA
Temperature Coefficient
Magnitude of Input Offset Voltage
-1.1
-
μV/oC
DC CHARACTERISTICS FOR EACH TRANSISTOR
DC Forward Base-to-Emitter Voltage
(Figure 6)
VBE
VCE = 6V, IC = 1mA
674
774
874
mV
Temperature Coefficient of
Base-to-Emitter Voltage
(Figure 6)
VCE = 6V, IC = 1mA
-
-0.9
-
mV/oC
Collector Cutoff Current (Figure 7)
ICBO
VCB = 10V, IE = 0
-
0.0013
100
nA
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10μA, IE = 0
20
60
-
V
Collector-to-Substrate Breakdown Voltage
V(BR)CIO
IC = 10μA, IB = IE = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE = 10μA, IC = 0
5
7
-
V
DYNAMIC CHARACTERISTICS FOR EACH DIFFERENTIAL AMPLIFIER
1/f Noise Figure (For Single Transistor)
(Figure 12)
NF
f = 100kHz, RS = 500Ω,
IC = 1mA
-1.5
-
dB
Gain Bandwidth Product (For Single
Transistor) (Figure 11)
fT
VCE = 6V, IC = 5mA
-
1.35
-
GHz
Collector-Base Capacitance (Figure 8)
CCB
IC = 0,
VCB = 5V
Note 3
-
0.28
-
pF
Note 4
-
0.15
-
pF
Collector-Substrate
Capacitance (Figure 8)
CCI
IC = 0, VCI = 5V
-
1.65
-
pF
Common Mode Rejection Ratio
CMRR
I3 = I9 = 2mA
-
100
-
dB
AGC Range, One Stage (Figure 2)
AGC
Bias Voltage = -6V
-
75
-
dB
Voltage Gain, Single-Ended Output
(Figures 2, 9, 10)
A
Bias Voltage = -4.2V,
f = 10MHz
18
22
-
dB
ΔV
IO
ΔT
----------------
ΔV
BE
ΔT
---------------
CA3102
相關(guān)PDF資料
PDF描述
TA35-C147F050C0 CIRCUIT BRKR THERMAL 5A 2POLE
TA35-C127F050C0 CIRCUIT BRKR THERMAL 5A 2POLE
TA35-C123F150C0 CIRCUIT BRKR THERMAL 15A 2POLE
44769-1002 CONN HDR RCPT 10POS 3MM VERT PCB
TA35-C123F100C0 CIRCUIT BRKR THERMAL 10A 2POLE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CA3102M96 制造商:Rochester Electronics LLC 功能描述:- Bulk
CA3102MZ 功能描述:IC OP AMP DUAL HI FREQ 14-SOIC RoHS:是 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOICN 包裝:剪切帶 (CT) 產(chǎn)品目錄頁(yè)面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT
CA3102R10SL-3P 功能描述:CONN RCPT 3 POS BOX MNT W/PINS RoHS:否 類別:連接器，互連式 >> 圓形 系列:MIL-DTL-5015, CA 標(biāo)準(zhǔn)包裝:1 系列:0B 連接器類型:插座，母形插口 位置數(shù):3 外殼尺寸 - 插件:303 外殼尺寸，MIL:- 安裝類型:面板安裝，隔墻式（后端螺母） 端子:焊杯 緊固型:推挽式 方向:G 防護(hù)等級(jí):- 外殼材料，表面處理:黃銅，鎳上鍍鉻 觸點(diǎn)表面涂層:金 特點(diǎn):屏蔽 包裝:散裝 觸點(diǎn)涂層厚度:- 額定電流:7A 電壓 - 額定:- 工作溫度:-55°C ~ 250°C 其它名稱:Q6787373
CA3102R10SL-3PA176 功能描述:CONN RCPT 3 POS BOX MNT W/PINS RoHS:否 類別:連接器，互連式 >> 圓形 系列:MIL-DTL-5015, CA 標(biāo)準(zhǔn)包裝:1 系列:MIL-DTL-5015, CT 連接器類型:插座，母形插口 位置數(shù):5 外殼尺寸 - 插件:14S-5 外殼尺寸，MIL:- 安裝類型:面板安裝，法蘭 端子:壓接 緊固型:有螺紋 方向:N（正常型） 防護(hù)等級(jí):抗環(huán)境影響 外殼材料，表面處理:鋁，鍍草綠色鎘 觸點(diǎn)表面涂層:金 特點(diǎn):- 包裝:散裝 觸點(diǎn)涂層厚度:- 額定電流:- 電壓 - 額定:200VAC，250VDC 工作溫度:-55°C ~ 125°C 配套產(chǎn)品:ICT6E14S-5PCAU-ND - CONN PLUG 5POS STRAIGHT W/PINS 其它名稱:ICT2-14S-5SCAU
CA3102R10SL-3P-A176 制造商:ITT Interconnect Solutions 功能描述:CA3102R10SL-3P-A176 / 121001-0270 R / Circular
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*